| Titre : | Understanding modern transistors and diodes/ Pulfrey, David L. |
| Type de document : | texte imprimé |
| Editeur : | Cambridge : Cambridge University press, 2010 |
| ISBN/ISSN/EAN : | 978-0-521-51460-6 |
| Format : | 354 p. / tab., fig., sch. / 25 cm |
| Langues: | Anglais |
| Mots-clés: | Modern transistors : Understanding ; Diodes : Understanding ; Energy Bands ; microelectronics |
| Résumé : |
This book is written for advanced undergraduate and graduate students in electrical or electronic engineering, as well as practicing engineers who want a deep, physics-based understanding of modern semiconductor devices — especially diodes and transistors.
Its goals are to: Build a rigorous theoretical foundation for semiconductor physics. Apply this theory to understand the operation and performance of modern transistors and diodes. Prepare readers for future device technologies, such as nanoscale and optoelectronic transistors. The book bridges the gap between fundamental physics and practical device engineering, covering topics from band theory and carrier transport to real-world devices like LEDs, solar cells, MOSFETs, and HBTs. |
| Note de contenu : |
Key Takeaways:
Strong integration of semiconductor physics with modern device applications. A comprehensive reference for understanding how and why transistors and diodes work the way they do. Equally useful for study, research, or advanced professional development. |
Exemplaires (1)
| Code-barres | Cote | Support | Localisation | Section | Disponibilité |
|---|---|---|---|---|---|
| 052151460601 | 621.381/03 | Livre | Bibliothèque Estin | Documentaires | Consultation sur place Exclu du prêt |
